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JAN2N6051
JAN2N6051
Darlington BJT JAN2N6051
Microchip Technology
JAN2N6051
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Diodes, Transistors and Thyristors
Darlington BJT
JAN2N6051.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypePNP
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.42
Package Height7.92
Package Length39.29
Supplier PackageTO-3
Standard Package NameTO-204-AA
Minimum DC Current Gain1000@1A@3V|1000@6A@3V|150@12A@3V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)4@120mA@12A
Maximum Continuous DC Collector Current (A)12
Maximum Collector-Emitter Saturation Voltage (V)2@24mA@6A|3@120mA@12A
Description
Trans Darlington PNP 80V 12A 150000mW 3-Pin(2+Tab) TO-3 Tray
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