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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N6353
JAN2N6353
Darlington BJT JAN2N6353
Microchip Technology
JAN2N6353
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Diodes, Transistors and Thyristors
Darlington BJT
JAN2N6353.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width17.78(Max)
Package Height8.64(Max)
Package Length31.79(Max)
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain1000@1A@5V|1000@5A@5V|200@10A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum Emitter Base Voltage (V)12
Maximum Collector Base Voltage (V)150
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)150
Maximum Continuous DC Collector Current (A)5
Maximum Collector-Emitter Saturation Voltage (V)2.5@10mA@5A
Description
Trans Darlington NPN 150V 5A 2000mW 4-Pin(3+Tab) TO-66 Tray
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