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KSD985OSTU
KSD985OSTU
Darlington BJT KSD985OSTU
onsemi
KSD985OSTU
--
Diodes, Transistors and Thyristors
Darlington BJT
KSD985OSTU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Supplier PackageTO-126
Minimum DC Current Gain4000@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)150
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (uA)10
Maximum Base Emitter Saturation Voltage (V)2@1mA@1A
Maximum Continuous DC Collector Current (A)1.5
Maximum Collector-Emitter Saturation Voltage (V)1.5@1mA@1A
Description
Trans Darlington NPN 60V 1.5A 1000mW 3-Pin(3+Tab) TO-126 Rail
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