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MJ11015G
MJ11015G
Darlington BJT MJ11015G
onsemi
MJ11015G
--
Diodes, Transistors and Thyristors
Darlington BJT
MJ11015G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain1000@20A@5V|200@30A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)120
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Typical Current Gain Bandwidth (MHz)4(Min)
Maximum Collector-Emitter Voltage (V)120
Maximum Base Emitter Saturation Voltage (V)3.5@200mA@20A|5@300mA@30A
Maximum Continuous DC Collector Current (A)30
Maximum Collector-Emitter Saturation Voltage (V)3@200mA@20A|4@300mA@30A
Description
Trans Darlington PNP 120V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
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