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MJ11030
MJ11030
Darlington BJT MJ11030
onsemi
MJ11030
--
Diodes, Transistors and Thyristors
Darlington BJT
MJ11030.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length38.86
Supplier PackageTO-204
Standard Package NameTO-3
SVHC Exceeds ThresholdYes
Minimum DC Current Gain1000@25A@5V|400@50A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)90
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)90
Maximum Base Emitter Saturation Voltage (V)3@200mA@25A|4.5@300mA@50A
Maximum Continuous DC Collector Current (A)50
Maximum Collector-Emitter Saturation Voltage (V)2.5@250mA@25A|3.5@500mA@50A
Description
Trans Darlington NPN 90V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray
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