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MJ11033G
MJ11033G
Darlington BJT MJ11033G
onsemi
MJ11033G
--
Diodes, Transistors and Thyristors
Darlington BJT
MJ11033G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length38.86
Supplier PackageTO-204
Standard Package NameTO-3
SVHC Exceeds ThresholdYes
Minimum DC Current Gain400@50A@5V|1000@25A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)120
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)120
Maximum Base Emitter Saturation Voltage (V)4.5@300mA@50A|3@200mA@25A
Maximum Continuous DC Collector Current (A)50
Maximum Collector-Emitter Saturation Voltage (V)3.5@500mA@50A|2.5@250mA@25A
Description
Trans Darlington PNP 120V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray
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