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MJE803
MJE803
Darlington BJT MJE803
onsemi
MJE803
--
Diodes, Transistors and Thyristors
Darlington BJT
MJE803.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Supplier PackageTO-225
SVHC Exceeds ThresholdYes
Minimum DC Current Gain100@4A@3V|750@2A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (uA)100
Maximum Continuous DC Collector Current (A)4
Maximum Collector-Emitter Saturation Voltage (V)2.8@40mA@2A|3@40mA@4A
Description
Trans Darlington NPN 80V 4A 40000mW 3-Pin(3+Tab) TO-225
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