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Darlington BJT MJH11019G
onsemi
MJH11019G
--
Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 5.3(Max) |
| Package Height | 21.08(Max) |
| Package Length | 16.26(Max) |
| Supplier Package | TO-247 |
| Standard Package Name | TO-247 |
| Minimum DC Current Gain | 100@15A@5V|400@10A@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 150000 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 200 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Current Gain Bandwidth (MHz) | 3(Min) |
| Maximum Collector-Emitter Voltage (V) | 200 |
| Maximum Base Emitter Saturation Voltage (V) | 3.8@150mA@15A |
| Maximum Continuous DC Collector Current (A) | 15 |
| Maximum Collector-Emitter Saturation Voltage (V) | 4@150mA@15A|2.5@100mA@10A |
| Description |
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