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MMBT6427LT1G
MMBT6427LT1G
Darlington BJT MMBT6427LT1G
onsemi
MMBT6427LT1G
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Diodes, Transistors and Thyristors
Darlington BJT
MMBT6427LT1G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Standard Package NameSOT
Maximum DC Current Gain100000@10mA@5V|200000@100mA@5V|140000@500mA@5V
Minimum DC Current Gain10000@10mA@5V|20000@100mA@5V|14000@500mA@5V
Number of Elements per Chip1
Minimum DC Current Gain Range>= 3600
Maximum Power Dissipation (mW)300
Maximum Emitter Base Voltage (V)12
Maximum Collector Base Voltage (V)40
Typical Transition Frequency (MHz)130(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Typical Current Gain Bandwidth (MHz)130(Min)
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (uA)0.05
Maximum Base Emitter Saturation Voltage (V)2@0.5mA@500mA
Maximum Continuous DC Collector Current (A)0.5
Maximum Collector-Emitter Saturation Voltage (V)1.5@0.5mA@500mA|1.2@0.5mA@50mA
Description
Trans Darlington NPN 40V 0.5A 300mW 3-Pin SOT-23 T/R
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