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MMBTA13LT1G
MMBTA13LT1G
Darlington BJT MMBTA13LT1G
onsemi
MMBTA13LT1G
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Diodes, Transistors and Thyristors
Darlington BJT
MMBTA13LT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain10000@100mA@5V|5000@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum Emitter Base Voltage (V)10
Maximum Collector Base Voltage (V)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Current Gain Bandwidth (MHz)125(Min)
Maximum Collector-Emitter Voltage (V)30
Maximum Collector Cut-Off Current (uA)0.1
Maximum Continuous DC Collector Current (A)0.3
Maximum Collector-Emitter Saturation Voltage (V)1.5@0.1mA@100mA
Description
Trans Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R
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