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MPSW45AG
MPSW45AG
Darlington BJT MPSW45AG
onsemi
MPSW45AG
--
Diodes, Transistors and Thyristors
Darlington BJT
MPSW45AG.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height7.87(Max)
Package Length5.21(Max)
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain25000@200mA@5V|15000@500mA@5V|4000@1A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum Emitter Base Voltage (V)12
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Current Gain Bandwidth (MHz)100(Min)
Maximum Collector-Emitter Voltage (V)50
Maximum Collector Cut-Off Current (uA)0.1
Maximum Base Emitter Saturation Voltage (V)2@2mA@1A
Maximum Continuous DC Collector Current (A)1
Maximum Collector-Emitter Saturation Voltage (V)1.5@2mA@1A
Description
Trans Darlington NPN 50V 1A 1000mW 3-Pin TO-92 Box
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