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Darlington BJT ULN2002ANE4
Texas Instruments
ULN2002ANE4
--
Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 16 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 16 |
| Part Status | Active |
| Configuration | Array 7 |
| Package Width | 6.6(Max) |
| Package Height | 5.08(Max) - 0.51(Min) |
| Package Length | 19.69(Max) |
| Supplier Package | PDIP |
| Standard Package Name | DIP |
| Number of Elements per Chip | 7 |
| Maximum Emitter Base Voltage (V) | 30 |
| Maximum Operating Temperature (°C) | 70 |
| Minimum Operating Temperature (°C) | -20 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (A) | 0.5 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.1@100mA|1.3@200mA|1.6@350mA |
| Description |
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