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ULN2003AIDR
ULN2003AIDR
Darlington BJT ULN2003AIDR
Texas Instruments
ULN2003AIDR
--
Diodes, Transistors and Thyristors
Darlington BJT
Specification
Product AttributeAttribute Value
HTS8542330001
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count16
AutomotiveNo
Lead ShapeGull-wing
PCB changed16
Part StatusActive
ConfigurationArray 7
Package Width4(Max)
Package Height1.5(Max)
Package Length10(Max)
Supplier PackageSOIC
Standard Package NameSOP
Number of Elements per Chip7
Maximum Emitter Base Voltage (V)30
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Operating Junction Temperature (°C)-40 to 125
Maximum Collector-Emitter Voltage (V)50
Maximum Continuous DC Collector Current (A)0.5
Maximum Collector-Emitter Saturation Voltage (V)1.1@100mA|1.3@200mA|1.6@350mA
Description
Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R
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