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2SJ162-E
2SJ162-E
Discrete Semiconductor Products 2SJ162-E
Renesas Electronics
2SJ162-E
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other
Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTube
FET TypeP-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Product StatusObsolete
Operating Temperature150°C (TJ)
Power Dissipation (Max)100W (Tc)
Supplier Device PackageTO-3P
Drain to Source Voltage (Vdss)160 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Description
MOSFET P-CH 160V 7A TO3P
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