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2SK1058-E
2SK1058-E
Discrete Semiconductor Products 2SK1058-E
Renesas Electronics
2SK1058-E
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTube
FET TypeN-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Product StatusActive
Operating Temperature150°C (TJ)
Power Dissipation (Max)100W (Tc)
Supplier Device PackageTO-3P
Drain to Source Voltage (Vdss)160 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Description
MOSFET N-CH 160V 7A TO3P
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