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2SK1835-E
2SK1835-E
Discrete Semiconductor Products 2SK1835-E
Renesas Electronics
2SK1835-E
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other
Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTube
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Product StatusActive
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs7Ohm @ 2A, 15V
Power Dissipation (Max)125W (Tc)
Supplier Device PackageTO-3P
Drain to Source Voltage (Vdss)1500 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Description
MOSFET N-CH 1500V 4A TO3P
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