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Discrete Semiconductor Products 2SK4150TZ-E
Renesas Electronics
2SK4150TZ-E
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Discrete Semiconductor Products
Specification
| Product Attribute | Attribute Value |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Product Status | Obsolete |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.7Ohm @ 200mA, 4V |
| Power Dissipation (Max) | 750mW (Ta) |
| Supplier Device Package | TO-92 |
| Gate Charge (Qg) (Max) @ Vgs | 3.7 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Description |
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