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Discrete Semiconductor Products GWS4621L
Renesas Electronics
GWS4621L
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Discrete Semiconductor Products
GWS4621L.pdf
Specification
Product AttributeAttribute Value
PackageBulk
TechnologyMOSFET (Metal Oxide)
Power - Max3.6W (Ta)
Configuration2 N-Channel (Dual) Common Drain
Mounting TypeSurface Mount
Package / Case4-XFLGA, CSP
Product StatusObsolete
Vgs(th) (Max) @ Id1.5V @ 1mA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs9.8mOhm @ 3A, 4.5V
Supplier Device Package4-WLCSP (1.82x1.82)
Gate Charge (Qg) (Max) @ Vgs11nC @ 4V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds1125pF @ 10V
Current - Continuous Drain (Id) @ 25°C10.1A (Ta)
Description
MOSFET 2N-CH
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