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Discrete Semiconductor Products GWS9293
Renesas Electronics
GWS9293
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Discrete Semiconductor Products
GWS9293.pdf
Specification
Product AttributeAttribute Value
PackageTube
TechnologyMOSFET (Metal Oxide)
Power - Max3.6W
Configuration2 N-Channel (Dual) Common Drain
Mounting TypeSurface Mount
Package / Case4-VDFN
Product StatusObsolete
Vgs(th) (Max) @ Id1.5V @ 1mA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs17mOhm @ 3A, 4.5V
Supplier Device Package4-QFN (2x2)
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 4V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 10V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta)
Description
MOSFET 2 N-CH 20V 9.4A 4QFN
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