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Discrete Semiconductor Products HAT1069C-EL-E
Renesas Electronics
HAT1069C-EL-E
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / Case6-SMD, Flat Leads
Product StatusObsolete
Vgs(th) (Max) @ Id1.2V @ 1mA
Operating Temperature150°C
Rds On (Max) @ Id, Vgs52mOhm @ 1.5A, 4.5V
Power Dissipation (Max)900mW (Ta)
Supplier Device Package6-CMFPAK
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Description
MOSFET P-CH 12V 4A 6CMFPAK
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