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HAT1072H-EL-E
HAT1072H-EL-E
Discrete Semiconductor Products HAT1072H-EL-E
Renesas Electronics
HAT1072H-EL-E
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeP-Channel
Vgs (Max)+10V, -20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseSC-100, SOT-669
Product StatusActive
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
Power Dissipation (Max)30W (Tc)
Supplier Device PackageLFPAK
Gate Charge (Qg) (Max) @ Vgs155 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds9500 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Description
MOSFET P-CH 30V 40A LFPAK
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