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HAT1126RWS-E
HAT1126RWS-E
Discrete Semiconductor Products HAT1126RWS-E
Renesas Electronics
HAT1126RWS-E
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 4.5V Drive
Power - Max3W (Ta)
Configuration2 P-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Product StatusObsolete
Vgs(th) (Max) @ Id2.5V @ 1mA
Operating Temperature150°C
Rds On (Max) @ Id, Vgs50mOhm @ 3A, 10V
Supplier Device Package8-SOP
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds2300pF @ 10V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Description
MOSFET P-CH SOP8
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