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HAT2192WP-EL-E
HAT2192WP-EL-E
Discrete Semiconductor Products HAT2192WP-EL-E
Renesas Electronics
HAT2192WP-EL-E
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Product StatusActive
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs230mOhm @ 5A, 10V
Power Dissipation (Max)25W (Tc)
Supplier Device Package8-WPAK (3)
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Description
MOSFET N-CH 250V 10A 8WPAK
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