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Discrete Semiconductor Products HAT2210RWS-E
Renesas Electronics
HAT2210RWS-E
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Discrete Semiconductor Products
Specification
| Product Attribute | Attribute Value |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Power - Max | 1.5W (Ta) |
| Configuration | 2 N-Channel (Dual), Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V |
| Supplier Device Package | 8-SOP |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V, 11nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V, 1330pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta), 8A (Ta) |
| Description |
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