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Discrete Semiconductor Products HAT2261H-EL-E
Renesas Electronics
HAT2261H-EL-E
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseSC-100, SOT-669
Product StatusObsolete
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs3.8mOhm @ 22.5A, 10V
Power Dissipation (Max)25W (Tc)
Supplier Device Package5-LFPAK
Gate Charge (Qg) (Max) @ Vgs27 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds4400 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C45A (Ta)
Description
MOSFET N-CH 30V 45A 5LFPAK
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