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N0601N-ZK-E1-AY
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Discrete Semiconductor Products N0601N-ZK-E1-AY
Renesas Electronics
N0601N-ZK-E1-AY
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusActive
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs4.2mOhm @ 50A, 10V
Power Dissipation (Max)1.5W (Ta), 156W (Tc)
Supplier Device PackageTO-263
Gate Charge (Qg) (Max) @ Vgs133 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds7730 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Description
MOSFET N-CH 60V 100A TO263
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