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NP100P06PLG-E1-AY
NP100P06PLG-E1-AY
Discrete Semiconductor Products NP100P06PLG-E1-AY
Renesas Electronics
NP100P06PLG-E1-AY
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusActive
Vgs(th) (Max) @ Id2.5V @ 1mA
Operating Temperature175°C (TJ)
Rds On (Max) @ Id, Vgs6mOhm @ 50A, 10V
Power Dissipation (Max)1.8W (Ta), 200W (Tc)
Supplier Device PackageTO-263
Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds15000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Description
MOSFET P-CH 60V 100A TO263
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