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Discrete Semiconductor Products NP89N04NUK-S18-AY
Renesas Electronics
NP89N04NUK-S18-AY
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other
Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTube
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Full Pack, I²Pak
Product StatusActive
Vgs(th) (Max) @ Id4V @ 250µA
Operating Temperature175°C (TJ)
Rds On (Max) @ Id, Vgs3.3mOhm @ 45A, 10V
Power Dissipation (Max)1.8W (Ta), 147W (Tc)
Supplier Device PackageTO-262
Gate Charge (Qg) (Max) @ Vgs102 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds5850 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Description
MOSFET N-CH 40V 90A TO262
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