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RJK1001DPP-E0#T2
RJK1001DPP-E0#T2
Discrete Semiconductor Products RJK1001DPP-E0#T2
Renesas Electronics
RJK1001DPP-E0#T2
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other
Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTube
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Product StatusObsolete
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs5.5mOhm @ 40A, 10V
Power Dissipation (Max)30W (Tc)
Supplier Device PackageTO-220FP
Gate Charge (Qg) (Max) @ Vgs147 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds10000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C80A (Ta)
Description
MOSFET N-CH 100V 80A TO220FP
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