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RJK5012DPE-00#J3
RJK5012DPE-00#J3
Discrete Semiconductor Products RJK5012DPE-00#J3
Renesas Electronics
RJK5012DPE-00#J3
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseSC-83
Product StatusActive
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs620mOhm @ 6A, 10V
Power Dissipation (Max)100W (Tc)
Supplier Device PackageLDPAK
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Description
MOSFET N-CH 500V 12A 4LDPAK
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