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RJK6002DPH-E0#T2
RJK6002DPH-E0#T2
Discrete Semiconductor Products RJK6002DPH-E0#T2
Renesas Electronics
RJK6002DPH-E0#T2
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Product StatusObsolete
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs6.8Ohm @ 1A, 10V
Power Dissipation (Max)30W (Tc)
Supplier Device PackageTO-251
Gate Charge (Qg) (Max) @ Vgs6.2 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds165 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Description
MOSFET N-CH 600V 2A TO251
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