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RJK6006DPP-A0#T2
RJK6006DPP-A0#T2
Discrete Semiconductor Products RJK6006DPP-A0#T2
Renesas Electronics
RJK6006DPP-A0#T2
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTube
FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Product StatusActive
Operating Temperature150°C
Rds On (Max) @ Id, Vgs920mOhm @ 5A, 10V
Power Dissipation (Max)30W (Ta)
Supplier Device PackageTO-220FP
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Description
MOSFET N-CH 600V 10A TO220FP
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