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RJK6018DPK-00#T0
RJK6018DPK-00#T0
Discrete Semiconductor Products RJK6018DPK-00#T0
Renesas Electronics
RJK6018DPK-00#T0
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTube
FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Product StatusActive
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs235mOhm @ 15A, 10V
Power Dissipation (Max)200W (Tc)
Supplier Device PackageTO-3P
Gate Charge (Qg) (Max) @ Vgs92 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Description
MOSFET N-CH 600V 30A TO3P
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