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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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Discrete Semiconductor Products RJM0603JSC-00#12
Renesas Electronics
RJM0603JSC-00#12
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Discrete Semiconductor Products
RJM0603JSC-00#12.pdf
Specification
Product AttributeAttribute Value
PackageTray
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 4.5V Drive
Power - Max54W
Configuration3 N and 3 P-Channel (3-Phase Bridge)
Mounting TypeSurface Mount
Package / Case20-SOIC (0.433", 11.00mm Width) Exposed Pad
Product StatusActive
Vgs(th) (Max) @ Id2.5V @ 1mA
Operating Temperature175°C
Rds On (Max) @ Id, Vgs20mOhm @ 10A, 10V
Supplier Device Package20-HSOP
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C20A
Description
MOSFET 3N/3P-CH 60V 20A HSOP
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