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Discrete Semiconductor Products UPA2670T1R-E2-AX
Renesas Electronics
UPA2670T1R-E2-AX
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 1.8V Drive
Power - Max2.3W
Configuration2 P-Channel (Dual)
Mounting TypeSurface Mount
Package / Case6-WFDFN Exposed Pad
Product StatusObsolete
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs79mOhm @ 1.5A, 4.5V
Supplier Device Package6-HUSON (2x2)
Gate Charge (Qg) (Max) @ Vgs5.1nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds473pF @ 10V
Current - Continuous Drain (Id) @ 25°C3A
Description
MOSFET 2P-CH 20V 3A 6HUSON
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