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UPA2812T1L-E1-AT
UPA2812T1L-E1-AT
Discrete Semiconductor Products UPA2812T1L-E1-AT
Renesas Electronics
UPA2812T1L-E1-AT
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Product StatusObsolete
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs4.8mOhm @ 30A, 10V
Power Dissipation (Max)1.5W (Ta), 52W (Tc)
Supplier Device Package8-HVSON (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds3740 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Description
MOSFET P-CH 30V 30A 8HVSON
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