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Discrete Semiconductor Products UPA2822T1L-E1-AT
Renesas Electronics
UPA2822T1L-E1-AT
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Product StatusLast Time Buy
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs2.6mOhm @ 34A, 10V
Power Dissipation (Max)1.5W (Ta)
Supplier Device Package8-HWSON (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs83 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds4660 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Description
MOSFET N-CH 30V 34A 8HWSON
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