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AM29LV640MU101RPCI
AM29LV640MU101RPCI
Flash AM29LV640MU101RPCI
Cypress
AM29LV640MU101RPCI
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size4Words
Pin Count64
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size64Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.6(Min)
Package Length13
Number of Words4M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)64M
Command CompatibleYes
OE Access Time (ns)40
Program Current (mA)60
Support of Page ModeYes
Max. Access Time (ns)100
Standard Package NameBGA
Maximum Erase Time (S)128/Chip
Operating Current (mA)20
Page Read Current (mA)50
Address Bus Width (bit)22
Programming Voltage (V)3 to 3.6|11.5 to 12.5
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)40
Maximum Programming Time (ms)0.8/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)3
Typical Operating Supply Voltage (V)3.3
Description
NOR Flash Parallel 3.3V 64M-bit 4M x 16 100ns 64-Pin Fortified BGA
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