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GE28F160C3TD70B
GE28F160C3TD70B
Flash GE28F160C3TD70B
Micron Technology
GE28F160C3TD70B
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTape and Reel
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size8Kbyte x 8|64Kbyte x 31
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.96
Interface TypeParallel
Package Height0.67
Package Length7.29
Number of Words1M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationAsymmetrical
Chip Density (bit)16M
Command CompatibleYes
OE Access Time (ns)20
Program Current (mA)55
Support of Page ModeNo
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockTop
Maximum Erase Time (s)5/Main Block
Operating Current (mA)18
Address Bus Width (bit)20
Programming Voltage (V)1.65 to 3.6|11.4 to 12.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeExtended
Maximum Programming Time (ms)0.2/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 16M-bit 1M x 16 70ns 48-Pin VFBGA T/R
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