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JS28F128M29EWLD
JS28F128M29EWLD
Flash JS28F128M29EWLD
Micron Technology
JS28F128M29EWLD
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size8Words/16Words
Pin Count56
AutomotiveNo
Boot BlockNo
ECC SupportNo
PCB changed56
Part StatusObsolete
Sector Size128Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length14
Number of Words16M/8M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)10
Support of Page ModeYes
Max. Access Time (ns)70
Maximum Erase Time (s)4/Block
Operating Current (mA)25
Page Read Current (mA)16
Address Bus Width (bit)24/23
Programming Voltage (V)11.5 to 12.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)710000/Byte
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns 56-Pin TSOP
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