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Flash JS28F640P30B85D
Micron Technology
JS28F640P30B85D
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size4Words
AutomotiveNo
Boot BlockYes
ECC SupportNo
Part StatusObsolete
Sector Size32Kbyte x 4|128Kbyte x 63
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Interface TypeParallel|Serial
Number of Words4M
ProgrammabilityYes
Block OrganizationAsymmetrical
Chip Density (bit)64M
Command CompatibleNo
OE Access Time (ns)25
Program Current (mA)51
Support of Page ModeYes
Max. Access Time (ns)85
Location of Boot BlockBottom
Maximum Erase Time (s)4/Main Block
Operating Current (mA)28
Page Read Current (mA)10
Address Bus Width (bit)22
Programming Voltage (V)8.5 to 9.5
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)0.2/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel/Serial 1.8V 64M-bit 4M x 16 85ns Tray
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