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K9F1G08U0B-PIB0000
K9F1G08U0B-PIB0000
Flash K9F1G08U0B-PIB0000
Samsung Electronics
K9F1G08U0B-PIB0000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusObsolete
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12.4(Max)
Number of Words128M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)25000
Standard Package NameSOP
Maximum Erase Time (S)0.002/Block
Page Read Current (mA)30
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25(Min)
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 25us 48-Pin TSOP-I Tray
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