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K9F1G08U0C-PIB0000
K9F1G08U0C-PIB0000
Flash K9F1G08U0C-PIB0000
Samsung Electronics
K9F1G08U0C-PIB0000
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeNAND
ECCN (US)3A991.b.1.a
Page Size2Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words128M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Page Read Current (mA)30
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NAND Flash Parallel 3.3V 1G-bit 128M x 8
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