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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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Flash K9F5608U0B-YCB0000
Samsung Electronics
K9F5608U0B-YCB0000
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size512byte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusUnconfirmed
Sector Size16Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words32M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)10000
Maximum Erase Time (S)0.003/Block
Operating Current (mA)20
Address Bus Width (bit)8
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Page Access Time (ns)50(Min)
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 256M-bit 32M x 8 10us Tray
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