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Flash K9K4G08U0M-YCB0000
Samsung Electronics
K9K4G08U0M-YCB0000
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size2Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words512M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)25000
Maximum Erase Time (S)0.003/Block
Page Read Current (mA)30
Address Bus Width (bit)8
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Page Access Time (ns)50(Min)
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 25us Tray
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