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Flash KFG1G16U2C-AIB6000
Samsung Electronics
KFG1G16U2C-AIB6000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTray
Pin Count63
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusObsolete
Sector Size128Kbyte x 1024
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Package Width10
Interface TypeParallel|Serial
Package Height0.58
Package Length13
Number of Words64M
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleNo
OE Access Time (ns)20
Program Current (mA)55
Support of Page ModeNo
Max. Access Time (ns)76|70
Standard Package NameBGA
Location of Boot BlockTop
Maximum Erase Time (S)0.006/Block
Operating Current (mA)65
Address Bus Width (bit)16
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.72/Sector
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NAND Flash Parallel/Serial 3.3V 1G-bit 64M x 16 76ns/70ns 63-Pin FBGA Tray
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