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Flash KLMAG2GEND-B031
Samsung Electronics
KLMAG2GEND-B031
--
Memory
Flash
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Supplier Unconfirmed |
| Cell Type | MLC NAND |
| ECCN (US) | 3A991.b.1.a |
| Packaging | Tape and Reel|Tray |
| Automotive | No |
| Boot Block | Yes |
| ECC Support | Yes |
| Part Status | Obsolete |
| Timing Type | Synchronous |
| Architecture | Sectored |
| Interface Type | Serial e-MMC |
| Number of Words | 128G/32G/16G |
| Programmability | Yes |
| Chip Density (bit) | 128G |
| Command Compatible | Yes |
| Support of Page Mode | No |
| Maximum Erase Time (S) | 0.02 |
| Number of Bits/Word (bit) | 1/4/8 |
| Maximum Operating Frequency (MHz) | 200 |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Typical Operating Supply Voltage (V) | 3|3.3 |
| Description |
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