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KLMCG4JETD-B041
KLMCG4JETD-B041
Flash KLMCG4JETD-B041
Samsung Electronics
KLMCG4JETD-B041
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeNAND
ECCN (US)3A991.b.1.a
AutomotiveNo
Boot BlockYes
ECC SupportYes
Part StatusActive
Timing TypeSynchronous
Interface TypeSerial e-MMC
Number of Words512G/128G/64G
ProgrammabilityYes
Chip Density (bit)512G
Command CompatibleYes
Support of Page ModeNo
Maximum Erase Time (S)0.02
Number of Bits/Word (bit)1/4/8
Maximum Operating Frequency (MHz)200
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)1.95|3.6
Minimum Operating Supply Voltage (V)1.7|2.7
Typical Operating Supply Voltage (V)1.8|3.3
Description
NAND Flash Serial e-MMC 1.8V/3.3V 512G-bit 512G/128G/64G x 1/4-bit/8-bit 153-Pin FBGA
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