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LE25S40AFDTWG
LE25S40AFDTWG
Flash LE25S40AFDTWG
onsemi
LE25S40AFDTWG
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockNo
ECC SupportNo
PCB changed8
Part StatusActive
Sector Size4Kbyte x 128
Timing TypeSynchronous
ArchitectureSectored
Package Width3.9
Interface TypeSerial (SPI, Dual SPI)
Package Height0.8(Max)
Package Length4.9
Number of Words512M
ProgrammabilityYes
Supplier PackageVSOIC N
Block OrganizationAsymmetrical
Chip Density (bit)4M
Command CompatibleYes
Program Current (mA)15
Support of Page ModeYes
Max. Access Time (ns)11
Maximum Erase Time (S)4/Chip
Operating Current (mA)10
Address Bus Width (bit)24
Programming Voltage (V)1.65 to 1.95
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)1/Page
Maximum Operating Temperature (°C)90
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.65
Typical Operating Supply Voltage (V)1.8
Description
Flash Serial (SPI, Dual SPI) 1.8V 4M-bit 512M x 8 11ns 8-Pin VSOIC N T/R
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