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M25P10-AVMN6TPSO
M25P10-AVMN6TPSO
Flash M25P10-AVMN6TPSO
Micron Technology
M25P10-AVMN6TPSO
--
Memory
Flash
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant
Cell TypeNOR
ECCN (US)EAR99
PackagingTape and Reel
Page Size256byte
Boot BlockNo
ECC SupportNo
Part StatusObsolete
Sector Size256Kbyte x 4
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial-SPI
Number of Words128K
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)1M
Command CompatibleYes
Process Technology150nm
Program Current (mA)15
Support of Page ModeNo
Max. Access Time (ns)8
Maximum Erase Time (s)6/Chip
Operating Current (mA)8
Address Bus Width (bit)1
Programming Voltage (V)2.3 to 3.6
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)5/Page
Maximum Operating Frequency (MHz)50
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.3
Typical Operating Supply Voltage (V)3.3|3|2.5
Description
NOR Flash Serial-SPI 2.5V/3V/3.3V 1M-bit 128K x 8 8ns 8-Pin SOIC N T/R
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